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    GaN and SiC Devices and Modules

    T04.7 - Exceptional Short Circuit Robustness in Monolithic Bidirectional GaN-on-Si Power HEMTs

    Tuesday, March 24, 2026
    11:00 AM - 11:20 AM CT
    Location: 214D
    GaN monolithic bidirectional switch (MBDS) has gained considerable attention due to their outstanding performance and are approaching commercialization. However, its short-circuit robustness has not yet reported. This work fills this gap by evaluating the short-circuit performance of a 650 V, 15 mΩ GaN-on-Si MBDS under a high bus voltage of 400 V based on a customized short-circuit test system. In single-event short-circuit tests, the device can safely withstand the short-circuit stress at 400 V for 10 µs, while the time-to-failure exceeds 50 µs. Under repetitive short-circuit tests, the device safely withstands repetitive 30 µs short-circuit stress at 400 V, with negligible parametric shift in static performance. This short-circuit robustness is among the best in all devices with similar voltage ratings. The excellent short-circuit robustness of GaN MBDS devices makes them highly attractive for demanding automotive and industrial applications.