Hehe Gong

The University of Hong Kong

Presentation(s):

• D25.3 - Robustness of SiC and GaN Diodes Under Extreme dv/dt Stress Up to 980 V/Ns

  Monday, March 23, 2026
  12:00 PM - 1:30 PM CT

• T04.3 - Dynamic On-Resistance and Threshold Voltage Characterizations of GaN HEMTs with Varying Substrate Connections in Steady-State Switching

  Tuesday, March 24, 2026
  9:10 AM - 9:30 AM CT

• T04.7 - Exceptional Short Circuit Robustness in Monolithic Bidirectional GaN-on-Si Power HEMTs

  Tuesday, March 24, 2026
  11:00 AM - 11:20 AM CT

• T04.8 - A 1000 V, 10 MHz Voltage Multiplier Enabled by a Monolithic GaN-on-Sapphire Diode Bridge IC

  Tuesday, March 24, 2026
  11:20 AM - 11:40 AM CT

• D25.3 - Robustness of SiC and GaN Diodes Under Extreme dv/dt Stress Up to 980 V/Ns

  Thursday, March 26, 2026
  12:00 PM - 1:45 PM CT

• D25.4 - In-Situ Characterization of Bipolar Stability in SiC and GaN p–n Diodes Over Stress Times from 10^-5 to 10^3 S

  Thursday, March 26, 2026
  12:00 PM - 1:45 PM CT