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    GaN and SiC Devices and Modules

    T04.3 - Dynamic On-Resistance and Threshold Voltage Characterizations of GaN HEMTs with Varying Substrate Connections in Steady-State Switching

    Tuesday, March 24, 2026
    9:10 AM - 9:30 AM CT
    Location: 214D
    The dynamic stability of GaN HEMTs with different substrate connections is a critical factor for reliable power electronic applications, particularly for the design of substrate bias management circuits in emerging GaN-on-Si monolithic bidirectional switches. Prior studies have mainly focused on dynamic on-resistance (RON) using pulse I–V or single-pulse double-pulse tests, which deviate from practical operation. In addition, dynamic threshold voltage (VTH)—essential to understanding RON shifts—has rarely been evaluated under different substrate conditions. This work presents a test platform enabling in-situ characterization of dynamic RON, dynamic VTH, and substrate bias. Using this setup, GaN HEMTs are tested under source-connected, drain-connected, and floating substrate configurations. A unique oscillatory behavior of the substrate bias between positive and negative values is observed under floating conditions at steady state. The combined in-situ measurements and modeling clarify the mechanisms behind dynamic RON shifts under different substrate configurations and can guide the active substrate management for GaN HEMTs.