Xin Yang (he/him/his)

Department of Electrical and Electronic Engineering, The University of Hong Kong

Xin Yang (Student Member, IEEE) received the B.S. degree in electrical engineering from Chongqing University, Chongqing, China, in 2020, and the M.S. degree in electrical engineering from Xi’an Jiaotong University, Xi’an, China, in 2023. He is currently working toward the Ph.D. degree in electrical engineering with the Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong.
From 2023 to 2025, he was a Graduate Research Assistant with the Center for Power Electronics Systems, Virginia Tech. His current research interests include characterization, robustness, and reliability of wide-bandgap power devices, as well as their applications in power electronics converters.

Presentation(s):

• D25.3 - Robustness of SiC and GaN Diodes Under Extreme dv/dt Stress Up to 980 V/Ns

  Monday, March 23, 2026
  12:00 PM - 1:30 PM CT

• T04.3 - Dynamic On-Resistance and Threshold Voltage Characterizations of GaN HEMTs with Varying Substrate Connections in Steady-State Switching

  Tuesday, March 24, 2026
  9:10 AM - 9:30 AM CT

• T04.7 - Exceptional Short Circuit Robustness in Monolithic Bidirectional GaN-on-Si Power HEMTs

  Tuesday, March 24, 2026
  11:00 AM - 11:20 AM CT

• T04.8 - A 1000 V, 10 MHz Voltage Multiplier Enabled by a Monolithic GaN-on-Sapphire Diode Bridge IC

  Tuesday, March 24, 2026
  11:20 AM - 11:40 AM CT

• D25.3 - Robustness of SiC and GaN Diodes Under Extreme dv/dt Stress Up to 980 V/Ns

  Thursday, March 26, 2026
  12:00 PM - 1:45 PM CT

• D25.4 - In-Situ Characterization of Bipolar Stability in SiC and GaN p–n Diodes Over Stress Times from 10^-5 to 10^3 S

  Thursday, March 26, 2026
  12:00 PM - 1:45 PM CT