D25.4 - In-Situ Characterization of Bipolar Stability in SiC and GaN p–n Diodes Over Stress Times from 10^-5 to 10^3 S

Thursday, March 26, 2026

12:00 PM - 1:45 PM CT

Location: Poster 3

Technical Dialogue Presenter(s)

Xin Yang (he/him/his)

Department of Electrical and Electronic Engineering, The University of Hong Kong

Co-Author(s)

HG

Hehe Gong

The University of Hong Kong
ZY

Zineng Yang

The University of Hong Kong
HC

Hongchang Cui (he/him/his)

University of Hong Kong
HZ

Hengbo Zhang

Department of Electrical and Electronic Engineering, The University of Hong Kong
YH

Yifei Huang

Center for Advanced Semiconductors and Integrated Circuits (CASIC)
Kuokchi Lei (he/him/his)

Department of Electronic Engineering, Tsinghua University
YZ

Yuhao Zhang

University of Hong Kong

In this work, we developed a dynamic–static hybrid test methodology to characterize the stability of wide-bandgap (WBG) p–n diodes over stress times from 10 µs to 1000 s. We used a B1505A curve tracer for long-duration stress (1–1000 s) and a custom H-bridge circuit for short-duration stress (down to 10 µs). This approach allowed for in-situ characterization of parametric shifts in SiC and GaN p–n diodes. The SiC diode showed a recoverable 0.47 V negative shift in its forward characteristics as off-state stress time increased, whereas the GaN diode remained stable with no measurable degradation. These findings provide an advanced methodology for WBG device qualification and have significant implications for high-frequency power electronics.