Department of Electrical and Electronic Engineering, The University of Hong Kong
T04.3 - Dynamic On-Resistance and Threshold Voltage Characterizations of GaN HEMTs with Varying Substrate Connections in Steady-State Switching
Tuesday, March 24, 20269:10 AM - 9:30 AM CT
D25.4 - In-Situ Characterization of Bipolar Stability in SiC and GaN p–n Diodes Over Stress Times from 10^-5 to 10^3 S
Thursday, March 26, 202612:00 PM - 1:45 PM CT
