T04.8 - A 1000 V, 10 MHz Voltage Multiplier Enabled by a Monolithic GaN-on-Sapphire Diode Bridge IC

Tuesday, March 24, 2026

11:20 AM - 11:40 AM CT

Location: 214D

Technical Lecture Presenter(s)

ZY

Zineng Yang

The University of Hong Kong

Co-Author(s)

Xin Yang (he/him/his)

Department of Electrical and Electronic Engineering, The University of Hong Kong
HC

Hongchang Cui (he/him/his)

University of Hong Kong
Ning Yan

Virginia Polytechnic Institute and State University
Xipei Yu

Center for Power Electronics Systems
HG

Hehe Gong

The University of Hong Kong
YQ

Yuan Qin

The Virginia Polytechnic Institute and State University
DD

Dong Dong

Virginia Polytechnic Institute and State University
QL

Qiang Li

Virginia Polytechnic Institute and State University
Bin Lu, PhD (he/him/his)

Finwave Semiconductor Inc.
YZ

Yuhao Zhang

University of Hong Kong

This paper demonstrates a monolithically-integrated AlGaN/GaN-on-Sapphire diode bridge integrated circuit (IC) that enables high-voltage, high-frequency power conversion. The IC integrates four AlGaN/GaN-on-sapphire field-plated Schottky barrier diodes (SBDs) within a compact 4 × 4 mm2 QFN package. By reducing parasitic inductance and capacitance associated with discrete device packaging, the GaN IC facilitates the operation of a two-stage Cockcroft-Walton voltage multiplier at a 10 MHz, generating a stable >1000 V DC output. The individual SBD within the IC exhibits a dynamic breakdown voltage over 1.5 kV and an ultra-low, temperature-independent junction capacitance. This work validates monolithic GaN-on-Sapphire as a key enabling technology for the next generation of kilovolt, multi-megahertz power electronics.