This work presents power cycling test results from Wolfspeed 1200V 75mO SiC discrete MOSFETs in TO-247-4L package. The results are used to adjust the parameters of a previously reported model. The model parameters thus derived show that the model matches the data collected and agrees with the general trend seen in literature for similar devices. This study captures a broad range of test parameters: temperature swings (maximum minus minimum junction temperature during a test) between 30K and 100K, device on-time, t(on), between 0.01s to 2s, and maximum junction temperature between 115°C to 180°C. This model has been successfully applied to various industrial mission profiles to predict the lifetime of SiC MOSFETs in the field to help design for higher reliability.
