Hehe Gong

The University of Hong Kong

Presentation(s):

• D25.3 - Robustness of SiC and GaN Diodes Under Extreme dv/dt Stress Up to 980 V/ns

  Monday, March 23, 2026
  12:00 PM - 1:30 PM CT

• T04.3 - Dynamic On-Resistance and Dynamic Threshold Voltage of GaN-on-Si HEMTs with Varying Substrate Connections in Steady-State Hard Switching

  Tuesday, March 24, 2026
  9:10 AM - 9:30 AM CT

• T04.7 - Evaluation and Application of Kilovolt GaN-on-Sapphire Diode Ic

  Tuesday, March 24, 2026
  11:00 AM - 11:20 AM CT

• D25.3 - Robustness of SiC and GaN Diodes Under Extreme dv/dt Stress Up to 980 V/ns

  Thursday, March 26, 2026
  12:00 PM - 1:45 PM CT

• D25.4 - In-situ Characterization of Forward Stability in SiC and GaN Diodes Over Stress Times from 10⁻⁵ to 103³ S

  Thursday, March 26, 2026
  12:00 PM - 1:45 PM CT